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DMN26D0UT
N-CHANNEL ENHANCEMENT MODE MOSFET
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Features
Mechanical Data
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Low On-Resistance:
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Case: SOT-523
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3.0 Ω @ 4.5V
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Case Material: Molded Plastic, “Green” Molding Compound. UL
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? 4.0 Ω @ 2.5V
? 6.0 Ω @ 1.8V
? 10 Ω @ 1.5V
Very Low Gate Threshold Voltage, 1.0V max
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
ESD Protected Gate
Lead, Halogen, and Antimony Free By Design/RoHS
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Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – Matte Tin annealed over Alloy 42 leadframe.
Solderable per MIL-STD-202, Method 208
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.002 grams (approximate)
Compliant (Note 2)
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"Green" Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Gate
Drain
D
Gate
Protection
Diode
Source
G
S
ESD PROTECTED
TOP VIEW
EQUIVALENT CIRCUIT
TOP VIEW
Maximum Ratings
@T A = 25°C unless otherwise specified
Drain Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Characteristic
Symbol
V DSS
V GSS
I D
Value
20
± 10
230
Unit
V
V
mA
Pulsed Drain Current
T P = 10μs
I DM
805
mA
Thermal Characteristics
@T A = 25°C unless otherwise specified
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
P D
R θ JA
T J , T STG
300
417
-55 to +150
mW
° C/W
° C
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
DMN26D0UT
Document number: DS31854 Rev. 2 - 2
1 of 6
www.diodes.com
September 2009
? Diodes Incorporated
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